Exploring the kinetics of ordered silicon nanowires with the formation of nanogaps using metal-assisted chemical etching.
نویسندگان
چکیده
Actual dimension control of silicon (Si) nanowire arrays was conducted using metal-assisted chemical etching on Si patterned by electron beam lithography. The appearance of nanogaps at the edge of each nanowire provides the diffusion pathways of reactants for Si dissolution, predominantly causing distinct etching rates that depend upon the spacings of nanogaps.
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ورودعنوان ژورنال:
- Physical chemistry chemical physics : PCCP
دوره 16 48 شماره
صفحات -
تاریخ انتشار 2014